00693naa#a2200169#i#450# EN\\bibl\16216 20260331011729.2 20250915b2025####ek#y0engy0150####ca RU Research of influence of technological modes of “field-stop” layer creation on SPT-IGBT characteristics Conference article/thesis Moscow National Research University of Electronic Technology 2025 5 с. Conference article/thesis local Транзисторы с более чем двумя p-n-переходами. 621.382.333.34 Abrashin Pavel Sergeevich Krasyukov Anton Yurievich mminfo.editorum.ru