00693naa#a2200169#i#4500001001500000005001700015100004100032102000700073200013900080210007200219215001000291608003700301675010000338700003100438700003100469856002300500EN\\bibl\1621620260328033119.6##a20250915b2025####ek#y0engy0150####ca##aRU1#aResearch of influence of technological modes of “field-stop” layer creation on SPT-IGBT characteristicseConference article/thesis1#aMoscowcNational Research University of Electronic Technologyd2025##a5 с.##aConference article/thesis2local##aТранзисторы с более чем двумя p-n-переходами. 621.382.333.34#1aAbrashingPavel Sergeevich#1aKrasyukovgAnton Yurievich4#amminfo.editorum.ru