LDR 00693naa#a2200169#i#450#
001     EN\\bibl\16216
005     20260331185333.2
100 ## _a20250915b2025####ek#y0engy0150####ca
102 ## _aRU
200 1# _aResearch of influence of technological modes of “field-stop” layer creation on SPT-IGBT characteristics
       _eConference article/thesis
210 1# _aMoscow
       _cNational Research University of Electronic Technology
       _d2025
215 ## _a5 с.
608 ## _aConference article/thesis
       _2local
675 ## _aТранзисторы с более чем двумя p-n-переходами. 621.382.333.34
       _z
700 #1 _aAbrashin
       _gPavel Sergeevich
700 #1 _aKrasyukov
       _gAnton Yurievich
856 4# _amminfo.editorum.ru
       _u